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Recently, the research team led by Professor Xiuling Li used a "Van der Waals extension" method to grow nanowires from the bottom up on semiconductor substrate materials (such as silicon). Such nanowires are made of a material of a III-V material that can be used in optical devices such as solar cells and lasers.
The staff had previously experimented with growing III-V nanowires on silicon substrates, but they were often affected by silicon defects and the experimental results were less than ideal. Now, researchers have attempted to develop indium gallium arsenide nanowires on graphene sheets, thereby taking advantage of the superior mechanical and conductive properties of graphene, a single atomic thickness material of carbon.
Graphene is thinner and softer than hard and brittle silicon; and due to its good conductivity, graphene enables direct energization of the nanowires. In addition, graphene is inexpensive, and it can be subjected to exfoliation treatment or carbon gas synthesis from a piece of graphite.
Mohseni said: One reason to use graphene to grow nanowires is to stop using thicker and more expensive substrate materials. A common solar cell, nearly 80% of its manufacturing cost is consumed on the substrate material. Therefore, the quality and cheap graphene has become the best target for scientific research. Moreover, the use of graphene as a substrate will add more functions that are not available in conventional substrate materials.
The staff extracted the mixture of indium, gallium and arsenic into a container with graphene sheets. The surface of the graphene began to self-assemble and grow in the vertical direction, and its shape resembled a dense carpet. At the same time, the experimental control also used the same method but only used two gases to grow the nanowires. The results show that graphene-based InGaAs (indium gallium arsenide) nanowires can separate the InGaAs core and InGaAs shell.
“This is a phenomenon that was not anticipated before,†Professor Li said. Many devices require a structure similar to a core-shell; usually, after growing a nucleus under certain conditions, these established conditions are changed and then the outside is grown. The shell of the nanowire based on the graphene substrate material can complete the core shell growth by itself, one step at a time. In addition, due to self-growth, the interface between the core and the shell is perfect.
So, what is the reason for this self-core growth? After research, the staff found that the atomic spacing inside the indium arsenic crystal structure is equivalent to the carbon atom spacing inside the graphene structure. Therefore, when the mixed gas of indium, gallium, and arsenic is sucked into the container, the crystallization nucleation process starts. Indium arsenic is nearly perfectly deposited on the graphene surface and gallium is deposited on the surface of the formed nanowire. This phenomenon was unexpected for researchers; because under normal circumstances, the crystals grown by the van der Waals epitaxy do not react with the substrate.
In addition, by adjusting the ratio of indium and gallium in the manufacturing process of semiconductor materials, researchers can make the optical properties and conduction properties of nanowires reasonably coordinated.
Next, Professor Li's team plans to use the new graphene growth nanowires they have developed to make solar cells and other electronic devices.
The study was supported by the National Science Foundation and the US Department of Energy and published on Nano Letters . (Compiled from " Nanowires Grown On Graphene Have Surprising Structure " Translation: Wang Xian)
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Graphene growth nanowire technology
Abstract The self-assembled wire structure consists of the core and outer shell of the material composition, which is the characteristic that advanced electronic equipment should have in the future. Nanowires, as a nano-scale micro-wire for semiconductor materials, have great potential applications in transistors, solar energy, and sensors. &nbs
The self-assembled wire structure consists of the core and outer shell of the material composition, which is the characteristic that advanced electronic equipment should have in the future. Nanowires, as a nano-scale micro-wire for semiconductor materials, have great potential applications in transistors, solar energy, and sensors.