When silicon crystals are doped with other impurities, such as boron, phosphorus, etc., when boron is doped, there is a hole in the silicon crystal, and there are only 3 electrons around the boron atom, so blue holes are generated. This hole is very unstable because there is no electron, and it is easy to absorb electrons and neutralize, forming a P(positive) type semiconductor.

Also, after the phosphorus atom is doped, because the phosphorus atom has five electrons, one electron becomes very active, forming an N-type semiconductor.

N-type semiconductors contain more holes, and P-type semiconductors contain more electrons. Thus, when the P-type and N-type semiconductors are combined together, a potential difference is formed at the contact surface. This is the PN junction.

When the P-type and N-type semiconductors are bonded together, a special thin layer is formed in the interface region between the two semiconductors. The P-type side of the interface is negatively charged and the N-type side is positively charged. This is because P-type semiconductors have many holes, N-type semiconductors have many free electrons, and there is a concentration difference. The electrons in the N region diffuse into the P region, and the holes in the P region diffuse into the N region. Once diffused, an "internal electric field" is formed from N to P, thus preventing the diffusion from proceeding. After reaching equilibrium, such a special thin layer forms a potential difference, which is the PN junction.

When the wafer receives light, in the PN junction, holes of the N-type semiconductor move toward the P-type region, and electrons in the P-type region move toward the N-type region, thereby forming a current from the N-type region to the P-type region. Then a potential difference is formed in the PN junction, which forms a power source.

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